A experiment conducted to determine the behavior of the QHE of the graphene material used high mobility graphene samples that were deposited on silicon wafers using a simple but efficient extraction method to obtain mesoscopic graphite pieces. Afterwards, graphene samples measuring 3-10 μm were prepared and later placed in a Hall bar and an “oxygen plasma etching process was used to remove parts of the sample that were not required in the experiment (Gusynin and Sharapov 17). The entire experiment was set up and run to determine the results of the QHE on the graphene sample based on the magneto-resistance behaviour.
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